G30n60a4 datasheet на русском

G30n60a4 datasheet на русском

HGTG30N60A4 — IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальная температура перехода (Tj): 150

HGTG30N60A4 Datasheet (PDF)

1.1. hgtg30n60b3d.pdf Size:212K _fairchild_semi

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT Packaging with Anti-Parallel Hyperfast Diode JEDEC STYLE TO-247 E The HGTG30N60B3D is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar G transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T

1.2. hgtg30n60a4.pdf Size:161K _fairchild_semi

HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching � >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar � 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a � 600V Switching SOA Capability MOSFET and the low on-state conduction

1.3. hgtg30n60c3d.pdf Size:268K _fairchild_semi

HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes � 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage � Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs � Short Circuit Rating and bipolar transistors. The dev

1.4. hgtg30n60a4d.pdf Size:173K _fairchild_semi

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode � >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage � 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs � 600V Switching SOA Capability and bipolar transistors. This device has the high input impedance of a M

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1.5. hgtg30n60b3.pdf Size:204K _fairchild_semi

HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching � 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar � 600V Switching SOA Capability transistors. This device has the high input impedance of a � Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC MOSFET

Номер в каталоге Описание (Функция) производитель
G30N60A4 600 V SMPS IGBT Fairchild Semiconductor
Другие PDF недоступен.
G30N60A4 Datasheet PDF :

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.

Features
• 60 A, 600 V @ TC = 110°C
• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 30 A
• Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C
• Low Conduction Loss

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